The RTP-200 can be equipped with a maximum of 4 process gas lines (controlled by mass flow controllers). The furnace is capable of mixing gases as required. The gas flow can be changed and adjusted at each step. As standard, the device is equipped with a mass flow controller for nitrogen at 5 standard liters per minute.
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The RTP-200 can be equipped with a maximum of 4 process gas lines (controlled by mass flow controllers). The furnace is capable of mixing gases as required. The gas flow can be changed and adjusted at each step. As standard, the device is equipped with a mass flow controller for nitrogen at 5 standard liters per minute.
The system is equipped with a purge gas line for venting the process chamber. The purge gas line can be used during the process. The purge gas flow is controlled via a needle valve.
Technical Specifications
Type | RTP-200 |
Substrate Compatibility | - Wafer up to 200 mm (8") diameter - Substrate up to 182 mm x 182 mm size |
Holders Included | - Quartz glass holder suitable for single 200 mm diameter wafers - Quartz glass holder for M10 solar wafers (182 mm x 182 mm) - Graphite susceptor |
Gas System | - Integrated gas inlet and outlet - Standard process gas line with nitrogen mass flow meter (5 Nl/min) - Cooling gas line (unrestricted) for rapid substrate cooling |
Chamber Type & Features | Cold-wall furnace with water-cooled aluminum chamber, offering: - High process reproducibility - Low memory effect (chamber retains temperature stability) - Contamination-free process environment - No metallic or cross-contamination - Small chamber size, ideal for high vacuum - Uniform gas distribution over the substrate - Easy chamber cleaning - Fast cooling phases |
Heating System | - Heated by 24 infrared lamps (230V, 2000 W) - Selectable top and bottom heating - Maximum temperature: 1000 °C (optional up to 1200 °C) - Temperature control via thermocouple (Type S, Pt10Rh-Pt) |
Cooling Rates | - 200 K/min (from 1000 °C to 400 °C) - 30 K/min (from 400 °C to 100 °C) |
For more information, please contact us.
The RTP-200 can be equipped with a maximum of 4 process gas lines (controlled by mass flow controllers). The furnace is capable of mixing gases as required. The gas flow can be changed and adjusted at each step. As standard, the device is equipped with a mass flow controller for nitrogen at 5 standard liters per minute.
The system is equipped with a purge gas line for venting the process chamber. The purge gas line can be used during the process. The purge gas flow is controlled via a needle valve.
Technical Specifications
Type | RTP-200 |
Substrate Compatibility | - Wafer up to 200 mm (8") diameter - Substrate up to 182 mm x 182 mm size |
Holders Included | - Quartz glass holder suitable for single 200 mm diameter wafers - Quartz glass holder for M10 solar wafers (182 mm x 182 mm) - Graphite susceptor |
Gas System | - Integrated gas inlet and outlet - Standard process gas line with nitrogen mass flow meter (5 Nl/min) - Cooling gas line (unrestricted) for rapid substrate cooling |
Chamber Type & Features | Cold-wall furnace with water-cooled aluminum chamber, offering: - High process reproducibility - Low memory effect (chamber retains temperature stability) - Contamination-free process environment - No metallic or cross-contamination - Small chamber size, ideal for high vacuum - Uniform gas distribution over the substrate - Easy chamber cleaning - Fast cooling phases |
Heating System | - Heated by 24 infrared lamps (230V, 2000 W) - Selectable top and bottom heating - Maximum temperature: 1000 °C (optional up to 1200 °C) - Temperature control via thermocouple (Type S, Pt10Rh-Pt) |
Cooling Rates | - 200 K/min (from 1000 °C to 400 °C) - 30 K/min (from 400 °C to 100 °C) |
For more information, please contact us.
