HTTF-1200-ALD electric furnace is a rotation tube furnace combining with two-channel ALD valves and one channel liquid-vapor delivery (Atomic Layer Deposition) and as well as four channels gas delivery to make the surface coating on powder by both ALD and CVD. The smart design makes of Rotation Powder ALD Tube Furnace System more cost-effective and affordable for every research group.
Control Panel | All parameters of Vapor, ALD, and Gas flow are integrated into one mobile cart and controlled by PLC via a 6" touch screen panel: Two-Channel ALD valve For channels MFC gas delivery Please click the picture below to see control interface |
ALD valve | Two ALD valves with pulse controller (min 10 ms duration) Capable of heating with thermal actuators |
Liquid-Vapor Generator | Automatic liquid-vapor generator is included and connects to ALD valve |
Rotation furnace | Max 1100ºC for continuous heating Two programmable precision digital temperature controllers with 30 segments. Input power: 208 – 240V AC input, a single phase at max. 4KW Rotation speed: 0 - 10 RPM 4" quartz Tube as the drawing below |
Anti-corrosive Pressure Gauge | 3.8x10-5 to 1125 Torr measurement range Anti-corrosive, gas-type independent High accuracy and reproducibility at atmosphere for reliable atmospheric pressure detection Fast atmospheric detection eliminates waiting time and shortens process cycle Easy to exchange plug & play sensor element Click the picture to view detail spec. |
Vacuum Pump | 10E-2 Torr vacuum can be achieved inside the processing tube The vacuum pump is not included, suggest you order a dry pump for CVD process by click picture below |
More Bubbler | Click the picture below to order bubbler or evaporator for CVD, and below right (1-2) for Constant pressure control module Could add Quartz Crystal and thermocouple to monitoring thin film thickness and temperature at extra cost |
Warranty | One year limited warranty with lifetime support (Consumable parts such as processing tubes, O-rings, and heating elements are not covered by the warranty, please order replacements at related products below). |
Application Notes | Tube furnaces with quartz tubes are designed for use under vacuum and low pressure < 0.2 bars / 3 psi / 0.02 Mpa Attention: A two-stage pressure regulator must be installed on the gas cylinder to limit the pressure to below 3 PSI for safe operation. The flow rate for gasses should be limited to < 200 SCCM (or 200 ml/min) for reducing thermal shocks to the tube Vacuum limit definition for all quartz tube furnaces: * Vacuum pressures may only be safely used up to 1000°C |
Application | Using ALD to significant decrease the high solid-solid interfacial impedance between the garnet electrolyte and electrode materials. Related Article: Negating interfacial impedance in garnet-based solid-state Li metal batteries |
Atomic layer deposition, or ALD, is a manufacturing approach that deposits materials and films in exact places. This can include metals on top of metals, dielectrics on dielectrics, or any other combination. The goal is to reduce or replace the number of patterning steps in the chip or device fabrication process.
A type of chemical vapor deposition (CVD), ALD splits the deposition process into half-reactions, each of which can be well-controlled.
Basically, there are two types of ALD—thermal and plasma enhanced. Thermal ALD involves a binary process with two reactants—A and B. The first reactant, A, is pumped into the ALD chamber. The wafer is processed and then the chemistries are purged. Then, the second reactant, B, undergoes the same step.
In plasma-enhanced ALD, the reactions are plasma-based, a method used by low-temperature applications.
There are several configurations for ALD tools: furnace/batch, single-wafer, and spatial-based:
Furnace/batch systems handle a multitude of wafers and enable thicker films. Used by DRAM makers, batch systems are relatively fast, but there is a trade-off in terms of uniformities.
Single-wafer ALD tools are used in applications, where the uniformity specs are thinner and tighter. Single-wafer, which is used to deposit high-k dielectrics in logic, are also time-based systems. In time-based tools, the reactions take place in a chamber for a set or given time.
Spatial ALD tools are mini-batch systems. A number of wafers are placed in the system. The wafers travel to various zones. At each zone, a reactant is pumped into the chamber. The wafer is processed and is then moved to the next zone.
Generally, there is no superior tool type. Batch, single-wafer and spatial tools are geared for specific applications, and each tool type has its advantages and disadvantages.
In one possible futuristic flow, a tool selectivity deposits a self-assembled monolayer chemistry on a surface. This, in turn, forms a tiny mask or template on the surface at or near perfect alignment.
There also is a direct-write version of ALD, which uses e-beam and multi-beam tools to pattern the surface from the ground up.
ALD has a range of applications, including high-k, DRAM, 3D NAND, multi-patterning, and fin doping.
HTTF-1200-ALD electric furnace is a rotation tube furnace combining with two-channel ALD valves and one channel liquid-vapor delivery (Atomic Layer Deposition) and as well as four channels gas delivery to make the surface coating on powder by both ALD and CVD. The smart design makes of Rotation Powder ALD Tube Furnace System more cost-effective and affordable for every research group.
Control Panel | All parameters of Vapor, ALD, and Gas flow are integrated into one mobile cart and controlled by PLC via a 6" touch screen panel: Two-Channel ALD valve For channels MFC gas delivery Please click the picture below to see control interface |
ALD valve | Two ALD valves with pulse controller (min 10 ms duration) Capable of heating with thermal actuators |
Liquid-Vapor Generator | Automatic liquid-vapor generator is included and connects to ALD valve |
Rotation furnace | Max 1100ºC for continuous heating Two programmable precision digital temperature controllers with 30 segments. Input power: 208 – 240V AC input, a single phase at max. 4KW Rotation speed: 0 - 10 RPM 4" quartz Tube as the drawing below |
Anti-corrosive Pressure Gauge | 3.8x10-5 to 1125 Torr measurement range Anti-corrosive, gas-type independent High accuracy and reproducibility at atmosphere for reliable atmospheric pressure detection Fast atmospheric detection eliminates waiting time and shortens process cycle Easy to exchange plug & play sensor element Click the picture to view detail spec. |
Vacuum Pump | 10E-2 Torr vacuum can be achieved inside the processing tube The vacuum pump is not included, suggest you order a dry pump for CVD process by click picture below |
More Bubbler | Click the picture below to order bubbler or evaporator for CVD, and below right (1-2) for Constant pressure control module Could add Quartz Crystal and thermocouple to monitoring thin film thickness and temperature at extra cost |
Warranty | One year limited warranty with lifetime support (Consumable parts such as processing tubes, O-rings, and heating elements are not covered by the warranty, please order replacements at related products below). |
Application Notes | Tube furnaces with quartz tubes are designed for use under vacuum and low pressure < 0.2 bars / 3 psi / 0.02 Mpa Attention: A two-stage pressure regulator must be installed on the gas cylinder to limit the pressure to below 3 PSI for safe operation. The flow rate for gasses should be limited to < 200 SCCM (or 200 ml/min) for reducing thermal shocks to the tube Vacuum limit definition for all quartz tube furnaces: * Vacuum pressures may only be safely used up to 1000°C |
Application | Using ALD to significant decrease the high solid-solid interfacial impedance between the garnet electrolyte and electrode materials. Related Article: Negating interfacial impedance in garnet-based solid-state Li metal batteries |
Atomic layer deposition, or ALD, is a manufacturing approach that deposits materials and films in exact places. This can include metals on top of metals, dielectrics on dielectrics, or any other combination. The goal is to reduce or replace the number of patterning steps in the chip or device fabrication process.
A type of chemical vapor deposition (CVD), ALD splits the deposition process into half-reactions, each of which can be well-controlled.
Basically, there are two types of ALD—thermal and plasma enhanced. Thermal ALD involves a binary process with two reactants—A and B. The first reactant, A, is pumped into the ALD chamber. The wafer is processed and then the chemistries are purged. Then, the second reactant, B, undergoes the same step.
In plasma-enhanced ALD, the reactions are plasma-based, a method used by low-temperature applications.
There are several configurations for ALD tools: furnace/batch, single-wafer, and spatial-based:
Furnace/batch systems handle a multitude of wafers and enable thicker films. Used by DRAM makers, batch systems are relatively fast, but there is a trade-off in terms of uniformities.
Single-wafer ALD tools are used in applications, where the uniformity specs are thinner and tighter. Single-wafer, which is used to deposit high-k dielectrics in logic, are also time-based systems. In time-based tools, the reactions take place in a chamber for a set or given time.
Spatial ALD tools are mini-batch systems. A number of wafers are placed in the system. The wafers travel to various zones. At each zone, a reactant is pumped into the chamber. The wafer is processed and is then moved to the next zone.
Generally, there is no superior tool type. Batch, single-wafer and spatial tools are geared for specific applications, and each tool type has its advantages and disadvantages.
In one possible futuristic flow, a tool selectivity deposits a self-assembled monolayer chemistry on a surface. This, in turn, forms a tiny mask or template on the surface at or near perfect alignment.
There also is a direct-write version of ALD, which uses e-beam and multi-beam tools to pattern the surface from the ground up.
ALD has a range of applications, including high-k, DRAM, 3D NAND, multi-patterning, and fin doping.
