Bridgman Furnace allows lab-sized crystals to be produced with the Bridgman in a vertical vacuum tube furnace, Czochralski or Stepanov method. This technique is used to grow single crystals of semiconductor materials (silicon, germanium and gallium arsenide), metals, salts and synthetic gemstones.
The pulling speed is adjustable and controls accurately as low as 0.001”/min. (0.025mm/min). A separate motor is provided to rotate the 3/8” seed rod.
Our crystal growing option can also be fitted on select front loading Bridgman furnace using the top chamber port, such as our Multi-application Laboratory Furnace or select Arc Melting Furnaces.
STANDARD FEATURES of Bridgman furnace
Bridgman method - Crystal growing
In vacuum up to 1450 °C
In an inert atmosphere up to 1800 °C
Precisely defined and controlled pulling speed
Manual operation
Data recording option
For crystal growth using Bridgman, Czochralski or Stepanov method
Adjustable pulling speed as low as 0.001”/min. (0.025mm/min)
Adjustable seed rod rotation
Fits easily in our 101mm dia. X 203mm high) hot zone front loading furnaces
Includes all electrical, mechanical and control components
The Bridgman Crystal Growth Furnace includes MoSi2 heating elements that are mounted in a vertical, hanging position and are surrounded by vacuum formed plates to insulate the heat from the housing. The housing is slotted to enable convection cooling of the casing. Depending on the melting point of the sample, the maximum temperature is designed up to 1600 °C, 1700 °C, or 1800 °C. For the pulling device, two motors with different transmission ratios are implemented. For instance, the fast moving of the samples is possible with a speed of approximately 10 mm/s, whereas the Bridgman crystal growing process, the pulling speed is only 0.00001 mm/s (10 nm/s).
If Bridgman furnace temperatures of more than 1800 °C are required for Bridgman crystal growing processes, HT offers custom designed solutions. Please contact us for a free consultation - we are glad to help, ht@ovenfurnace.com .
Bridgman Furnace allows lab-sized crystals to be produced with the Bridgman in a vertical vacuum tube furnace, Czochralski or Stepanov method. This technique is used to grow single crystals of semiconductor materials (silicon, germanium and gallium arsenide), metals, salts and synthetic gemstones.
The pulling speed is adjustable and controls accurately as low as 0.001”/min. (0.025mm/min). A separate motor is provided to rotate the 3/8” seed rod.
Our crystal growing option can also be fitted on select front loading Bridgman furnace using the top chamber port, such as our Multi-application Laboratory Furnace or select Arc Melting Furnaces.
STANDARD FEATURES of Bridgman furnace
Bridgman method - Crystal growing
In vacuum up to 1450 °C
In an inert atmosphere up to 1800 °C
Precisely defined and controlled pulling speed
Manual operation
Data recording option
For crystal growth using Bridgman, Czochralski or Stepanov method
Adjustable pulling speed as low as 0.001”/min. (0.025mm/min)
Adjustable seed rod rotation
Fits easily in our 101mm dia. X 203mm high) hot zone front loading furnaces
Includes all electrical, mechanical and control components
The Bridgman Crystal Growth Furnace includes MoSi2 heating elements that are mounted in a vertical, hanging position and are surrounded by vacuum formed plates to insulate the heat from the housing. The housing is slotted to enable convection cooling of the casing. Depending on the melting point of the sample, the maximum temperature is designed up to 1600 °C, 1700 °C, or 1800 °C. For the pulling device, two motors with different transmission ratios are implemented. For instance, the fast moving of the samples is possible with a speed of approximately 10 mm/s, whereas the Bridgman crystal growing process, the pulling speed is only 0.00001 mm/s (10 nm/s).
If Bridgman furnace temperatures of more than 1800 °C are required for Bridgman crystal growing processes, HT offers custom designed solutions. Please contact us for a free consultation - we are glad to help, ht@ovenfurnace.com .
