Top-Seeded Solution Growth (TSSG) method is a promising technique for producing high-quality SiC single crystals. In the TSSG method of SiC, solid Si is heated and melted in the graphite crucible by the induction-heating coils. The needed carbon dissolves from the crucible into the Si melt, then forms a dilute Si-C solution (melt).
Top-Seeded Solution Growth (TSSG) method is a promising technique for producing high-quality SiC single crystals. In the TSSG method of SiC, solid Si is heated and melted in the graphite crucible by the induction-heating coils. The needed carbon dissolves from the crucible into the Si melt, then forms a dilute Si-C solution (melt).
Specifications:
Furnace construction | Double shell steel casing with a cooling fan to keep a low surface temperature High-purity alumina fiber insulation and liner for max. energy saving Inside Chamber Size of furnace 9.5" Diameter x 8.6 " high (9 Liter) The furnace is slidable on the frame for easy sample loading and unloading Quartz window is available upon request |
Working Temperature | Max. Working Temperature: 1250ºC (< 30 minute) Standard Working Temperature: 1150ºC (continuous) |
Control Panel | PLC touch screen control panel for controlling temperature, pulling speed, rapid downward speed and rotation speed of pulling rod Temp. Controller: 8 steps programmable and auto PID control with +/- 0.1ºC accuracy (Eurotherm 3000 inside) Heating Rate 0~10ºC / min (suggestion at =< 5ºC) Pulling Speed: 0.5-50mm/h adjustable Downward speed: 50 mm/minute fixed The rotation speed of the pulling rod: 0.1-23 RPM adjustable |
Pulling Range | 250 mm Max. |
Power | AC 220V Single Phase 4.0 KW |
Power Cable & Plug | 10 feet long 10-3 AWG heavy-duty UL-approved power cable is included. The plug is not included. |
Warranty | One-year limited warranty (Consumable parts such as processing tubes, o-rings, and heating elements are not covered by the warranty.) |
Top-Seeded Solution Growth (TSSG) method is a promising technique for producing high-quality SiC single crystals. In the TSSG method of SiC, solid Si is heated and melted in the graphite crucible by the induction-heating coils. The needed carbon dissolves from the crucible into the Si melt, then forms a dilute Si-C solution (melt).
Specifications:
Furnace construction | Double shell steel casing with a cooling fan to keep a low surface temperature High-purity alumina fiber insulation and liner for max. energy saving Inside Chamber Size of furnace 9.5" Diameter x 8.6 " high (9 Liter) The furnace is slidable on the frame for easy sample loading and unloading Quartz window is available upon request |
Working Temperature | Max. Working Temperature: 1250ºC (< 30 minute) Standard Working Temperature: 1150ºC (continuous) |
Control Panel | PLC touch screen control panel for controlling temperature, pulling speed, rapid downward speed and rotation speed of pulling rod Temp. Controller: 8 steps programmable and auto PID control with +/- 0.1ºC accuracy (Eurotherm 3000 inside) Heating Rate 0~10ºC / min (suggestion at =< 5ºC) Pulling Speed: 0.5-50mm/h adjustable Downward speed: 50 mm/minute fixed The rotation speed of the pulling rod: 0.1-23 RPM adjustable |
Pulling Range | 250 mm Max. |
Power | AC 220V Single Phase 4.0 KW |
Power Cable & Plug | 10 feet long 10-3 AWG heavy-duty UL-approved power cable is included. The plug is not included. |
Warranty | One-year limited warranty (Consumable parts such as processing tubes, o-rings, and heating elements are not covered by the warranty.) |
