This is a 1200C Mist CVD furnace designed specifically for crystal growth. This device plays an important role in fields such as materials science and semiconductor research, and can achieve high-quality crystal growth through atomization chemical vapor deposition technology under specific temperature conditions. This is a 1200℃ tube furnace integrated with an ultrasonic mist system for epitaxial thin film or single crystal growth via the mist CVD method.
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This is a 1200C Mist CVD furnace designed specifically for crystal growth. This device plays an important role in fields such as materials science and semiconductor research, and can achieve high-quality crystal growth through atomization chemical vapor deposition technology under specific temperature conditions.
This is a 1200℃ tube furnace integrated with an ultrasonic mist system for epitaxial thin film or single crystal growth via the mist CVD method.
Specifications
Quartz tube&Sample holder | A quartz processing tube with flanges and the size of OD 60mm×ID54mm×L1000mm is included. One quartz sample holder is included,which can hold 4 pcs of 10×10×0.5mm substrate at 45 degrees. |
Ultrasonic mis generator | 1.7 mhz ultrasonic generator is located in an airtight SS316 tank.4 levels of ultrasonic powder are for adjusting the mist amount. A liquid syringe pump is equipped to inject automatically which comes with 1 60ml plastic syringe. |
MFC Gas Delivery system | 2 channel gases mixing and delivering station is included. Another 2 channels of gases are filled into a tube furnace as diluting gas after mixing. Working pressure range:0.10.5 Mpa |
Vacuum pump | Vacuum port is installed on the flange of the processing tube with a valve to connect a vacuum pump. A dry pump is strongly recommended for the longer service life of CVD. |
Control Panel | Touch screen control panel to set operation parameters,including:Temperature program and curve. 4 channels gas flow rate. |
This is a 1200C Mist CVD furnace designed specifically for crystal growth. This device plays an important role in fields such as materials science and semiconductor research, and can achieve high-quality crystal growth through atomization chemical vapor deposition technology under specific temperature conditions.
This is a 1200℃ tube furnace integrated with an ultrasonic mist system for epitaxial thin film or single crystal growth via the mist CVD method.
Specifications
Quartz tube&Sample holder | A quartz processing tube with flanges and the size of OD 60mm×ID54mm×L1000mm is included. One quartz sample holder is included,which can hold 4 pcs of 10×10×0.5mm substrate at 45 degrees. |
Ultrasonic mis generator | 1.7 mhz ultrasonic generator is located in an airtight SS316 tank.4 levels of ultrasonic powder are for adjusting the mist amount. A liquid syringe pump is equipped to inject automatically which comes with 1 60ml plastic syringe. |
MFC Gas Delivery system | 2 channel gases mixing and delivering station is included. Another 2 channels of gases are filled into a tube furnace as diluting gas after mixing. Working pressure range:0.10.5 Mpa |
Vacuum pump | Vacuum port is installed on the flange of the processing tube with a valve to connect a vacuum pump. A dry pump is strongly recommended for the longer service life of CVD. |
Control Panel | Touch screen control panel to set operation parameters,including:Temperature program and curve. 4 channels gas flow rate. |
