Crystal growing furnace is designed for growing SnO2 single crystal by PVT methods (Physical Vapor Transport) under a controlled atmosphere up to 1700 ^oC at an affordable cost. This Bridgman furnace also can be used to grow the crystal by the Bridgman method via pulling a crucible.

STANDARD FEATURES of Crystal growing furnace

Bridgman method - Crystal growing

In vacuum up to 1450 °C

In an inert atmosphere up to 1700 °C

Precisely defined and controlled pulling speed

Manual operation

Data recording option

HT crystal growth furnace is providing the two most important parameters necessary for critical growth: stability and control.  Both are necessary to achieve consistency, repeatability, and uniformity – the keys to successful crystal growth in the laboratory and in production.

Stability provides the crystal grower with a known and constant environment for demanding crystal growth. Stability assures uniform, tightly defined temperatures and thermal gradients for consistent melts and zone refining. Stability requires well-controlled gaseous or vacuum environments. Stability in crystal growth demands smooth, highly constant, vibration-free motions with large and dynamic ranges, programmable first and second derivatives and multi-axis configurations – yet all must be controlled.

Control of crystal growth furnace is achieved through HT’s computer system interface which holds temperatures precisely where they are set and constant changes quickly and smoothly to new values with minimal overshoot. The motion system must provide pull rates that are highly consistent in both time and space from moment to moment and from week to week. Positional accuracy must be maintained through the complete draw cycle to assure consistent and repeatable results from the crystal growth system.